Unravelling the silicon-silicon dioxide interface under different operating conditions

Silicon dioxide (SiO2) has played a critical role in the development of high-efficiency silicon (Si)-based photovoltaic devices. Recently, it experienced renaissance as an interlayer many new contact passivating structures. Studies have extensively investigated recombination process at Si–SiO2 interface, however, only little is known about impact temperature on surface recombination. In this study, we investigate interface by varying temperature, excess carrier density, and dielectric fixed charge. An improved lifetime observed with increasing temperature. A forming gas anneal used to improve passivation quality, higher temperatures, hydrogenated degrades due increased state density. The degradation stronger for corona-charged SiO2, instability corona charge within dielectric. Using extended Shockley-Read Hall model, defects’ parameters are extracted. Most importantly, determine value temperature-dependence capture cross-sections interface.